Aluminium Gallium Nitride on Sapphire Template
Excellent substrate for UV optoelectronics devices
Available AlGaN templates on sapphire:
Sapphire Substrate Size
(single-size polished, c-plane) |
2”and 3” (See note)
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| Al composition (mol %) |
5% to 85% Al |
| AlGaN Thickness Range |
0.2 to 0.8 mm |
| Electrical Conductivity |
n-type (for <35 mole %) |
| Surface Morphology |
As grown |
| Optical Transparency |
UV transparency (depending on Al composition) |
Note: 4-inch sapphire templates are available upon request.
Benefits of using AlGaN templates:
- Excellent substrates for UV optoelectronics
- Simplify nucleation process with native AlGaN surface
- Reduce defect density in device structure and improve device performance
- Increase productivity and reduce maintenance cost on existing growth equipment
- Reduce epitaxial cost via throughput and yield increase
- Avoid possible patent contest issues related to buffer layer
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Optical transmission spectra measured for AlGaN, GaN and AlN templates grown by HVPE |
3 inch AlGaN template on sapphire |