Gallium Arsenide/Aluminium Gallium Arsenide Etching (GaAs/AlGaAs)

GaAs-AlGaAs-Etch-VCSEL
GaAs-AlGaAs VCSEL structure etched
by RIE. Resist mask is still in place

GaAs/AlGaAs etching in the PlasmaProTMSystemRIE100

  • Recommended Etch Gases:  SiCl4-Ar
  • Recommended Plasma Clean Gases: O2-SF6
  • Up to 200mm wafers

 

 Etch rate  50-150nm/min (dependant on batch size)
 Uniformity

< ± 5 % (for 2inch wafer, 5mm edge exclusion)


Please contact us for more detailed process information.

For ICP options, please see below:

 

  • ICP180 
  • ICP180 Selective 
  • ICP180 Sloped 
  • ICP380 
  •  

 

GaAs/AlGaAs VCSEL Structure

Typical GaAs/AlGaAs VCSEL structure

 

 

Typical GaAs/AlGaAs structure

Typical GaAs/AlGaAs structure

 

GaAs ICP-RIE

GaAs ICP-RIE

GaAs/AlGaAs VCSEL structures etched by ICP-RIE

GaAs/AlGaAs etching in the PlasmaPro System100 ICP180

  • Recommended Etch Gases:  SiCl4, Ar
  • Recommended Plasma Clean Gases: O2, SF6
  • Up to 100mm wafers

 Etch rate  > 350nm/min
 Uniformity

< ± 2.5% (50mm wafer, 5mm excl zone)

< ± 5 % (100mm wafer, 7mm excl zone)


Process features

  • Excellent run to run reproducibility for both etch rate and profile control.

GaAs/AlGaAs etching in the PlasmaPro System100 with ICP180

  • Recommended Etch Gases:  Cl2, SiCl4
  • Recommended Plasma Clean Gases: O2, SF6
  • Up to 100mm wafers

 Etch rate  > 1000nm/min
 Uniformity < ± 5 % (100mm wafer, 7mm excl zone)

Process features

  • SiCl4/Cl2 chemistry satisfies the need to form both volatile etch by-products and sidewall passivants. This produces a smooth, low damage process with exceptional profile control.
  • Excellent run to run reproducibility for both etch rate and profile control.

 

GaAs ICP etching in the PlasmaPro System100 with ICP180

  • Recommended Etch Gases:  SiCl4, Ar
  • Recommended Plasma Clean Gases: O2, SF6
  • Up to 100mm wafers

 Etch rate  > 200nm/min (dependent on exposed area)
 Uniformity < ± 5 % (100mm wafer, 7mm excl zone)

Process features

  • SiCl4/Ar chemistry satisfies the need to form volatile etch by-products, thus producing a smooth, low damage process. Excellent run to run reproducibility for both etch rate and profile control.

 selective GaAs/AlGaAs Etching

50nm GaAs layer etched selectively over AlGaAs active layer

GaAs gate recess etching selective over AlGaAs
in the Plasma Pro System100 ICP180

  • Recommended Etch Gases:  BCl3, SF6
  • Recommended Plasma Clean Gases: O2, SF6
  • Up to 100mm wafers

 

Etch rate for GaAs  > 10~50nm/min
Selectivity to AlGaAs > 50:1
Uniformity < ± 5 % (100mm wafer, 7mm excl zone)

 
 

Typical GaAs/AlGaAs structure

Sloped GaAs/AlGaAs etching in the PlasmaPro System100 ICP180
  • Recommended Etch Gases:  BCl3, Ar
  • Recommended Plasma Clean Gases: O2, SF6
  • Up to 100mm wafer

 

Etch rate > 350nm/min
Uniformity

< ± 2.0% (50mm wafer, 5mm excl zone)

< ± 5 % (100mm wafer, 7mm excl zone)

 GaAs/AlGaAs Etching
 GaAs/AlGaAs Etching

Demonstration of profile control achievable through process and sample preparation

GaAs Via hole etching in the PlasmaPro System100-ICP380

  • Recommended Etch Gases:  BCl3-Cl2
  • Recommended Plasma Clean Gases: O2-SF6
  • Up to 150mm wafer

 

Etch rate  > 2µm/min (50µm diameter via)
Uniformity

< ± 4 % (up to 150mm wafer, 7mm edge exclusion)   

Contact Us

Please click here if you would like additional information or assistance

Related Products

PlasmaPro System100
Load Locked Tool for GaAs/AlGaAs Etching
PlasmaPro System133
Load Locked Tool for GaAs/AlGaAs Etching
PlasmaPro NGP80
Open Load Tool for GaAs/AlGaAs Etching
Ionfab 300Plus
Ion Beam tool for GaAs/AlGaAs etching

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