Copper Etching (Cu)

Cu Etch - Copper Etch
Residue free Copper etch

Copper Etching from Oxford Instruments

Technologies

  • Ion Beam
  • ICP Etch for Failure Analysis

 

  • Cu ICP Etch for Failure Analysis 
  • Copper Ion Beam Etching 
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Copper Etching in the PlasmaProTM System133 ICP380

Recommended Etch Gases:  BCl3, Cl2 
Recommended Plasma Clean Gases:  CF4, O2
Wafer size  Up to 300mm wafers
Cu etch rate    >100nm/min
Uniformity within wafer <±6% across 300mm diameter with 7mm edge exclusion
Uniformity run to run <±6%
Selectivity Cu:  SiO2   >4:1

Process benefits

  • The flexibility of the ICP tool enables both isotropic and highly anisotropic etch processes
  • Clean removal of a wide range of materials is possible, without lifting of metal tracks
  • Excellent process repeatability

Cu Ion Beam Etch in the Ionfab®300Plus

  • Process gas: Ar
  • Up to 200mm wafer size
  • Summary performance data:
 Chamber base pressurea <3e-7 Torr 
 Load lock base pressureb <1e-5 Torr

a. After 12 hours bake out at 80˚C.
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from sample loading i.e. from the load lock to process platen with load lock pump down sequence.

Process Specification

Parameter/Process Cu etch
Diameter Etched 200 mm
Mask PR
Gas Chemistry Ar
Typical etch rate [nm/min]  20nm/min
Reproducibility [±%]  < 3
Uniformity [±%]  < 3
Selectivity to mask > 1

Notes: 

1. With 5mm edge exclusion, uniformity described below
2. Stress and uniformity value are guaranteed for deposition rates up to 50% of maximum rate

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Related Products

PlasmaPro System100
Load Locked Tool for Copper Etching
PlasmaPro NGP80
Open Load Tool for Cu Etching

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