Cr Etching - Chromium Etch

110 nm Cr etched at 20 nm/ min
selectivity to  Shipley S1800 series
> 1.5 : 1 Courtesy of University of
Joensuu, Department of Physics and
Mathematics.

Chromium (Cr) ICP Etching  using the PlasmaProTMSystem100 ICP180

Recommended Etch Gases: Cl2, O2, He
Recommended Plasma Clean Gases:  O2
Wafer size Up to 200mm wafers
Cr etch rate    >15nm/min.
Uniformity < ± 5% across 200mm diameter with 10mm edge exclusion

Process features

  • The Cl2-O2-He chemistry satisfies the need to form volatile etch by-products, thus producing a smooth, low damage process.
  • Excellent run to run reproducibility for both etch rate and profile control

 

  • SEM Images 
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Cr Etching

6 µm diameter dots anisotropic etch of 500 nm Cr AR-P 351 mask still in place 12 nm/ min at 1: 1.2 to the mask
Courtesy of MPI Halle, Dr Milenin and Dr Jamois

100nm Cr layer etched down to quartz substrate using ICP380

 

500 nm diameter holes anisotropic etch of 100 nm wide, 150 nm thick Cr lines ZEP mask still in place 7 nm/ min at 0.5 : 1 to the mask. Courtesy of MPI Halle Dr Milenin, Dr Jamios 

 

 

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PlasmaPro System100
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